Sen, P. ; Park, H. -M. ; Mukhopadhyay, R. ; Srirattana, N. ; Raghavan, A. ; Laskar, J. ; Cressler, J. D. ; Freeman, G.
(2004)
A Broadband, Small-Signal SiGe HBT Model for
Millimeter-Wave Applications.
In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
Full text available as:
Abstract
This paper describes a novel extraction
procedure for the intrinsic small-signal model parameters
of state-of-the-art 200 GHz SiGe HBTs. Analytical
expressions, augmented by a least-square error
minimization based optimization, are used to achieve, for
the first time, a broadband, small-signal SiGe HBT model
that is accurate up to 80 GHz. The intrinsic components for
a T-equivalent circuit are determined from open-collector,
reverse-bias and forward-bias measurements using proper
de-embedding schemes. A bias-independent capacitance i s
added in parallel with the intrinsic bias-independent base
resistance to model the raised extrinsic base device
structure used to achieve the very high fT and fmax found in
these advanced SiGe HBTs. The intrinsic components for
the physical model are extracted directly from the
analytical expressions. The model parameters, extracted
from measurements up to 40 GHz, give an accurate
representation of the small-signal SiGe HBT
characteristics up to 80 GHz.
Index Terms — Broadband, small-signal model, SiGe
HBTs, parameter extraction, physical model.
Abstract
This paper describes a novel extraction
procedure for the intrinsic small-signal model parameters
of state-of-the-art 200 GHz SiGe HBTs. Analytical
expressions, augmented by a least-square error
minimization based optimization, are used to achieve, for
the first time, a broadband, small-signal SiGe HBT model
that is accurate up to 80 GHz. The intrinsic components for
a T-equivalent circuit are determined from open-collector,
reverse-bias and forward-bias measurements using proper
de-embedding schemes. A bias-independent capacitance i s
added in parallel with the intrinsic bias-independent base
resistance to model the raised extrinsic base device
structure used to achieve the very high fT and fmax found in
these advanced SiGe HBTs. The intrinsic components for
the physical model are extracted directly from the
analytical expressions. The model parameters, extracted
from measurements up to 40 GHz, give an accurate
representation of the small-signal SiGe HBT
characteristics up to 80 GHz.
Index Terms — Broadband, small-signal model, SiGe
HBTs, parameter extraction, physical model.
Document type
Conference or Workshop Item
(Paper)
Creators
Subjects
DOI
Deposit date
15 Jun 2005
Last modified
17 Feb 2016 14:10
URI
Other metadata
Document type
Conference or Workshop Item
(Paper)
Creators
Subjects
DOI
Deposit date
15 Jun 2005
Last modified
17 Feb 2016 14:10
URI
Downloads
Downloads
Staff only: