Maneux, C. ; Belhaj, M. ; Labat, N. ; Touboul, A. ; Riet, M. ; Kahn, M. ; Godin, J. ; Bove, Ph.
(2004)
InP/GaAsSb/InP DHBT:
Analysis of specific material parameters and
high current effect by physical simulation.
In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract
Although InP/GaAs0.51Sb0.49/InP DHBT has recently attracted much interest, some sensitive material parameters are still uncertain. We detailed the simulation methodology used to evaluate bandgap energy, minority carrier lifetime and band gap narrowing effect. Moreover, the high-injection effect is analysed as resulting from electron parasitic barrier formation at base-collector junction.
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