Accurate Characterization of S-Band HBT Power Amplifier using simultaneously S parameters and Load-Pull Measurements

Chartier, E. ; Piotrowicz, S. ; Jacquet, J.C. ; Floriot, D. (2004) Accurate Characterization of S-Band HBT Power Amplifier using simultaneously S parameters and Load-Pull Measurements. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

This paper emphasizes for the first time the link existing between some small-signal power gain circles and the output load of maximum power in GaAs HBTs. We use the locus of power gain, named Minimum Conjugate- Termination Power, which have the value MSG/2K. MSG is maximum stable gain and K the stability factor. This method has been applied to the measurements by load-pull of 30W S-Band HBT power bar. By varying the bias of the amplifier, it is possible using only S-parameters data to localize accurately and quickly the locus of the power load.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Chartier, E.
Piotrowicz, S.
Jacquet, J.C.
Floriot, D.
Subjects
DOI
Deposit date
15 Jun 2005
Last modified
17 Feb 2016 14:11
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