Analysis of Temperature Dependence of GaAs DHBT Terminal Resistances Using the Observed Kink Effect

Dharmasiri, C. N. ; Vo, V. T. ; Koon, K. A. ; Rezazadeh, A. A. (2004) Analysis of Temperature Dependence of GaAs DHBT Terminal Resistances Using the Observed Kink Effect. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

Large parasitic series resistances of heterojunction bipolar transistor (HBT) are shown to cause a sharp kink in the base current (IB) of the Gummel plot at elevated temperatures under high collector currents (IC) and low base-collector (b-c) applied bias (VBC). This effect was analyzed and attributed to the temperature dependence of low-field and high field mobilities of undepleted and depleted areas at the b-c region. Using this observed kink a simple technique is presented to extract terminal resistances variation with temperature for an InGaP/GaAs DHBT. These extracted values are compared and verified with those extracted from s-parameter measurements. By incorporating these values into a temperature-dependent large signal DHBT model more accurate thermal behavior of IB at high current is demonstrated.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Dharmasiri, C. N.
Vo, V. T.
Koon, K. A.
Rezazadeh, A. A.
Settori scientifico-disciplinari
DOI
Data di deposito
15 Giu 2005
Ultima modifica
17 Feb 2016 14:11
URI

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