Ducatteau, D. ; Werquin, M. ; Gaquière, C. ; Théron, D. ; Martin, T. ; Delos, E. ; Grimbert, B. ; Morvan, E. ; Caillas, N. ; Hoël, V. ; De Jaeger, J.C. ; Delage, S. L.
(2004)
Influence of passivation on High-Power AlGaN/GaN
HEMT devices at 10GHz.
In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract
AlGaN/GaN high electron mobility transistors (HEMTS on SiC) were characterized before and after SiO2/Si3N4 passivation. DC, small signal, pulsed and large signal measurements were performed. We discuss the role and the influence of passivation on the device performance and characteristics. A good correlation is observed between pulsed and power measurements. At 10GHz, a 6.3W/mm power density with a 36% PAE at 2dB of compression was obtained after passivation, while only 2.9W/mm before passivation.
Abstract