Influence of passivation on High-Power AlGaN/GaN HEMT devices at 10GHz.

Ducatteau, D. ; Werquin, M. ; Gaquière, C. ; Théron, D. ; Martin, T. ; Delos, E. ; Grimbert, B. ; Morvan, E. ; Caillas, N. ; Hoël, V. ; De Jaeger, J.C. ; Delage, S. L. (2004) Influence of passivation on High-Power AlGaN/GaN HEMT devices at 10GHz. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

AlGaN/GaN high electron mobility transistors (HEMTS on SiC) were characterized before and after SiO2/Si3N4 passivation. DC, small signal, pulsed and large signal measurements were performed. We discuss the role and the influence of passivation on the device performance and characteristics. A good correlation is observed between pulsed and power measurements. At 10GHz, a 6.3W/mm power density with a 36% PAE at 2dB of compression was obtained after passivation, while only 2.9W/mm before passivation.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Ducatteau, D.
Werquin, M.
Gaquière, C.
Théron, D.
Martin, T.
Delos, E.
Grimbert, B.
Morvan, E.
Caillas, N.
Hoël, V.
De Jaeger, J.C.
Delage, S. L.
Subjects
DOI
Deposit date
16 Jun 2005
Last modified
17 Feb 2016 14:12
URI

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