Abstract

A 5 watt wideband power amplifier using a SiC MESFET has been designed. The frequency range covers 10 MHz to 2.4 GHz with small-signal gain of 8 dB. A broadband choke structure with a new technique was developed to obtain good isolation and low loss over the desired bandwidth. Input and output matching networks and shunt feedback topology were introduced to increase the bandwidth. At VDS= 30 V and IDS = 500 mA, power performance measurements with PAE of almost 35%, an output power of ≥ 37 dBm and 8 dB power gain over the operating bandwidth were achieved. Two-tone measurements at frequency spacing of 200 kHz were also done and OIP2 and OIP3 of 76 dBm and 49 dBm, respectively, were obtained. Finally, AM/AM and AM/PM distortions were measured and the results are discussed.