Abstract

In this paper, a high-efficiency rectifying antenna (rectenna) element, based on a novel E-pHEMT detector, is proposed. The slightly positive threshold voltage in this technology, allows its use on resistive detectors without applying an auxiliary gate bias. Based on an adequate selection of the DC load resistor, as well as the drain and gate impedance conditions, the losses on the RF to DC conversion process are reduced. A high gain aperture coupled patch is finally designed, assuring optimum impedance values at the fundamental and second harmonic. Using a rectenna loading of 47 , a 85.4% measured overall efficiency is achieved.