Galloo, J.S. ; Roelens, Y. ; Bollaert, S. ; Pichonat, E. ; Wallart, X. ; Cappy, A. ; Mateos, J.
(2004)
Ballistic devices based on T-Branch Junctions and YBranch
Junctions on GaInAs/AlInAs heterostructures.
In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
Full text available as:
Preview |
PDF
Download (332kB) | Preview |
Abstract
We present processes for building passive and active ballistic devices. A 2D Monte Carlo simulator was used to optimize these devices. We present also the study of the transition between ballistic and ohmic transport in T-Branch Junctions (TBJs) at room temperature by using DC characterization. Then we show experimental results for YBranch Junctions (YBJs) compared with Monte Carlo Simulations.
Abstract