Ballistic devices based on T-Branch Junctions and YBranch Junctions on GaInAs/AlInAs heterostructures

Galloo, J.S. ; Roelens, Y. ; Bollaert, S. ; Pichonat, E. ; Wallart, X. ; Cappy, A. ; Mateos, J. (2004) Ballistic devices based on T-Branch Junctions and YBranch Junctions on GaInAs/AlInAs heterostructures. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

We present processes for building passive and active ballistic devices. A 2D Monte Carlo simulator was used to optimize these devices. We present also the study of the transition between ballistic and ohmic transport in T-Branch Junctions (TBJs) at room temperature by using DC characterization. Then we show experimental results for YBranch Junctions (YBJs) compared with Monte Carlo Simulations.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Galloo, J.S.
Roelens, Y.
Bollaert, S.
Pichonat, E.
Wallart, X.
Cappy, A.
Mateos, J.
Subjects
DOI
Deposit date
16 Jun 2005
Last modified
17 Feb 2016 14:13
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