Thermal Memory Effects on the Linearity of a GaAs PHEMT

Accillaro, C. ; Cidronali, A. ; Zani, F. ; Loglio, G. ; Usai, M. ; Collodi, G. ; Camprini, M. ; Magrini, I. ; Manes, G. (2004) Thermal Memory Effects on the Linearity of a GaAs PHEMT. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract

This paper presents a comprehensive treatment of the nonlinear electro-thermal memory effect arising in a GaAs PHEMT. In particular is demonstrated the way with which the pure nonlinear electrical effect and the electro-thermal one combine and in turn determine a dispersive third-order intermodulation. The analysis is based on an accurate distributed model modified in order to take into account for the dynamic thermal behaviour under large signal operation. The results show a reduction of the intermodulation product in response to a reduction of the two tones frequency spacing, in agreement with the analytical treatment.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Accillaro, C.
Cidronali, A.
Zani, F.
Loglio, G.
Usai, M.
Collodi, G.
Camprini, M.
Magrini, I.
Manes, G.
Subjects
DOI
Deposit date
16 Jun 2005
Last modified
17 Feb 2016 14:13
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