Low-Frequency Noise Characterization of AlGaAs/GaAs HBT’s

Borgarino, M. ; Peroni, M. ; Cetronio, A. ; Fantini, F. (2002) Low-Frequency Noise Characterization of AlGaAs/GaAs HBT’s. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
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Abstract

In the present paper we evaluated the fabrication process of AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT’s) by means of low frequency noise characterizations carried out in the 100Hz-100kHz frequency range. We investigated the spectra of the base current fluctuations. The obtained results are compared with the data reported in the literature. The fabrication technology and the experimental set-up are briefly described.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Borgarino, M.
Peroni, M.
Cetronio, A.
Fantini, F.
Subjects
DOI
Deposit date
17 Jun 2004
Last modified
17 Feb 2016 13:36
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