Würfl, Joachim ; Schlechtweg, Michael
(2004)
Frontiers of III-V Compounds and Devices 0,1.
In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Abstract
The paper presents an overview on the
European status of electronic devices for micro- and mmwave
applications based on III/V compound semiconductors.
Both low noise and power devices for applications
from a few GHz up to several hundred GHz are considered
in terms of specific material and processing technologies
and of typical device results. This includes a survey on the
actual status of GaAs based HEMT and HBT devices,
metamorphic HEMT devices. Furthermore recent results
on high speed InP based HEMTs and HBTs are summarized.
Regarding power applications the potentials of mature
GaAs HBT technologies, power HEMTs and novel
GaN technologies are discussed and compared to each
other.
Abstract
The paper presents an overview on the
European status of electronic devices for micro- and mmwave
applications based on III/V compound semiconductors.
Both low noise and power devices for applications
from a few GHz up to several hundred GHz are considered
in terms of specific material and processing technologies
and of typical device results. This includes a survey on the
actual status of GaAs based HEMT and HBT devices,
metamorphic HEMT devices. Furthermore recent results
on high speed InP based HEMTs and HBTs are summarized.
Regarding power applications the potentials of mature
GaAs HBT technologies, power HEMTs and novel
GaN technologies are discussed and compared to each
other.
Document type
Conference or Workshop Item
(Paper)
Creators
Subjects
DOI
Deposit date
16 Jun 2005
Last modified
17 Feb 2016 14:14
URI
Other metadata
Document type
Conference or Workshop Item
(Paper)
Creators
Subjects
DOI
Deposit date
16 Jun 2005
Last modified
17 Feb 2016 14:14
URI
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