Abstract

A new statistical non-linear model of GaAs FET MMIC’s which allows to represent distance-dependent technological parameter variations by means of equivalent circuit parameters is presented. An automatic procedure to extract the statistical model parameters from a database of DC and S-parameter measurements has been developed. The procedure performs the extraction of the covariance matrices of two FET devices at different mutual distances and uses them to build the multi-device MMIC covariance matrix. Capability to reproduce statistical distribution has been successfully checked by performing hypothesis tests of equivalence on S-parameters at different distances in the 1-5 GHz frequency range.