Théron, D. ; Gaquière, C. ; De Jaeger, J.C. ; Delage, S. L.
(2004)
Recent Developments and Trends in GaN HFETs.
In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
Full text available as:
Preview |
PDF
Download (295kB) | Preview |
Abstract
This paper reviews the main challenges and results concerning GaN HFET research and development in Europe. Today several actors are working to allow the emergence of an European source for this technology. The activity sweeps all R&D fields from material growth to circuit realization and reliability.
Abstract
Other metadata
Downloads
Downloads
Staff only:
