Abstract

Diamond is a wide bandgap semiconductor with extremely attractive properties but also many technological difficulties. Doping is restricted to deep impurities and substrate size is very limited. Nevertheless in proof of concept experiments, the potential for high power, high temperature and high frequency applications can already well be estimated. In addition, first passive MEMS elements for advanced circuit applications have also been demonstrated, however still on nano-crystalline material, which is available with large surface area. Thus it is already possible to discuss an integrated systems approach when single crystal substrates in wafer size become available.