Construction of ZnO devices : electric and magnetic properties

Tabata, H. ; Matsui, H. ; Saeki, H. ; Masuda, S. (2004) Construction of ZnO devices : electric and magnetic properties. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.
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Zinc oxide is one of the wide band gap semiconductors. By using the ZnO-layer as an active channel layer, transparent transistors (ZnO-TFTs) have been constructed. The ratio Ion/Ioff of ZnO-TFTs fabricated on Si-wafers is about 106 and the optical transmittance of ZnO-TFTs fabricated on glass is more than 80%. It is also performed that the magnetic properties of ZnO thin films are controlled by V or Co doping under the non-equilibrium condition. Ferromagnetic properties of Co-ZnO films are confirmed by not only SQUID but also MCD and core-level XAS. Relatively weak signal of ferromagnetics suggests that a part of the film shows ferromagnetic character due to the inhomogeneous of the doped exotic cations (V, Co etc.). These results show that it is possible to fabricate a transparent spin-FET that can be operated even in the presence of visible light

Document type
Conference or Workshop Item (Paper)
Tabata, H.
Matsui, H.
Saeki, H.
Masuda, S.
Deposit date
16 Jun 2005
Last modified
17 Feb 2016 14:16

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