Noise, Large-Signal Modeling and Characterization of InP/InGaAs HBTs

Lal, N. ; Nuttinck, S. ; Raghavan, A. ; Gebara, E. ; Venkataraman, S. ; Papapolymerou, J. ; Laskar, J. (2002) Noise, Large-Signal Modeling and Characterization of InP/InGaAs HBTs. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.

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Abstract

We developed a robust large-signal model for InP/InGaAs HBTs. DC, small-signal, noise and power characteristics of InP/InGaAs HBTs are measured over a wide range of frequencies and bias conditions. A minimum noise figure (FMIN) of 3.5dB, and a gain of 16.8dB are achieved at 10-GHz. These measurement results are the basis for robust nonlinear models of InP/InGaAs HBT devices.

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