Abstract

RF MEMS switches provide a low-cost,high performance solution to many RF/microwaveapplications and these switches will be importantbuilding blocks for designing phase shifters, switchedfilters and reflector array antennas for military andcommercial markets.In this paper, progress in characterizing of THALEScapacitive MEMS devices under high RF power ispresented. The design, fabrication and testing ofcapacitive RF MEMS switches for microwave/mm- waveapplications on high-resistivity silicon substrate ispresented .The switches tested demonstrated powerhandling capabilities of 1W (30 dbm) for continuous RFpower. The reliability of these switches was tested atvarious power levels indicating that under continuousRF power. In addition a description of the powerfailures and their associated operating conditions ispresentedThe PC-based test stations to cycle switches and measurelifetime under DC and RF loads have been developed.Best-case lifetimes of 1010 cycles have been achieved inseveral switches from different lots under 30 dbm RFpower.