InP/InGaAs resonant tunneling diode with six-route negative differential resistances

Tsai, Jung-Hui ; Kang, Yu-Chi ; Lour, Wen-Shiung (2005) InP/InGaAs resonant tunneling diode with six-route negative differential resistances. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

Sequential tunneling behavior of p-n resonant tunneling diode with four-period InP/InGaAs superlattice is demonstrated. Theoretical calculation shows three split quantized energies in the four-period InP (50Å)/InGaAs (25Å) superlattice structure. For the increase of more negative differential resistance (NDR) routes, high-field domain is formed in the superlattice under sufficiently large operation biases. Experimentally, an interesting six-route NDR characteristic, resulting from the form of split miniband structures and the extension of high-field domain in the InP/InGaAs superlattice, is observed at room temperature.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Tsai, Jung-Hui
Kang, Yu-Chi
Lour, Wen-Shiung
Subjects
DOI
Deposit date
08 Feb 2006
Last modified
17 Feb 2016 14:18
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