A 150 to 220 GHz balanced doubler MMIC using a 50 nm metamorphic HEMT technology

Schwörer, C. ; Campos Roca, Y. ; Leuther, A. ; Tessmann, A. ; Seelmann-Eggebert, M. ; Massler, H. ; Schlechtweg, M. ; Weimann, G. (2005) A 150 to 220 GHz balanced doubler MMIC using a 50 nm metamorphic HEMT technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

Salva citazione

Citato da

Full text disponibile come:

Anteprima

Documento PDF
Download (398kB) | Anteprima

Abstract

A coplanar millimeter wave doubler MMIC coveringtheentire G-band was developed. Based on a 50nm metamorphic HEMT technology, thecircuitdemonstrates an output power of morethan–12dBmbetween 150- and 220 GHz for an input powerof0dBm.Byincreasing the input power to 12 dBm an output power exceeding 0 dBm was obtained in the frequency range between 180-and 220 GHz. Good fundamental rejection was ensured by using a Marchand Balun for balancing the design.The doubler was also used to provide the LO signal for a 170 to 200 GHz resistive FET mixer, yielding a conversion loss of 10 dB.

Abstract

Tipologia del documento

Documento relativo ad un convegno o altro evento (Atto)

Autori