Abstract

We report the development of an InP-based monolithic microwave integrated circuit production line to provide InP HEMT and InP HBT MMICs for both government and commercial applications. This three-inch fabrication facility was originally developed to produce high-performance InP HEMT and InP HBT MMICs specifically designed for government applications. Recent examples of performance capability include InP HEMT low-noise MMIC amplifiers with 12 dB gain at 155 Ghz, and the first fundamental frequency 94 Ghz HBT oscillator. However, InP-hased heterojunction devices also provide specific advantages for some high-volume commercial applications. We present here the production and performance results of InP HEMT and HBT MMICs for governmnent and commercial applications.