An InP-based HEMT and HBT MMIC production line

Streit, Dwight ; Tran, Liem ; Lai, Richard ; Chen, Yaochung ; Cowles, John ; Kobayashi, Kevin ; Oki, Aaron ; Block, Thomas ; Barksy, Mike ; Liu, Po-Hsin ; Elliott, Jeff (1997) An InP-based HEMT and HBT MMIC production line. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.
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Abstract

We report the development of an InP-based monolithic microwave integrated circuit production line to provide InP HEMT and InP HBT MMICs for both government and commercial applications. This three-inch fabrication facility was originally developed to produce high-performance InP HEMT and InP HBT MMICs specifically designed for government applications. Recent examples of performance capability include InP HEMT low-noise MMIC amplifiers with 12 dB gain at 155 Ghz, and the first fundamental frequency 94 Ghz HBT oscillator. However, InP-hased heterojunction devices also provide specific advantages for some high-volume commercial applications. We present here the production and performance results of InP HEMT and HBT MMICs for governmnent and commercial applications.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Streit, Dwight
Tran, Liem
Lai, Richard
Chen, Yaochung
Cowles, John
Kobayashi, Kevin
Oki, Aaron
Block, Thomas
Barksy, Mike
Liu, Po-Hsin
Elliott, Jeff
Subjects
DOI
Deposit date
23 Nov 2005
Last modified
17 Feb 2016 14:19
URI

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