A low–noise, high-linearity balanced amplifier in enhancement-mode GaAs pHEMT technology for wireless base-stations

Chong, Thomas (2005) A low–noise, high-linearity balanced amplifier in enhancement-mode GaAs pHEMT technology for wireless base-stations. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

This paper describes the design and realization of a balanced low-noise amplifier (LNA) module in the 2GHz band suitable for wireless infrastructure (base-station) receiver front-end applications. The design effort entails both aspects of MMIC and module/packaging design to realize a fully-matched solution in a miniature 5mmx6mm footprint. The MMIC design leverages Agilent Technologies’ proprietary 0.5 micron enhancement-mode Pseudomorphic High-Electron-Mobility Transistor (e-pHEMT) technology for best-in-class noise performance and linearity. In a balanced amplifier application with external 3-dB hybrids, this design exhibits a very low noise figure (NF) of 0.9dB, coupled with a high OIP3 (Output Third Order Intercept Point) of 46dBm at 31dB gain. It is also capable of delivering a P-1dB of 31dBm at 2.0GHz with a 5.0V supply.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Chong, Thomas
Subjects
DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:19
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