Santarelli, Alberto ; Vannini, Giorgio ; Borgarino, M. ; Menozzi, Roberto ; Baeyens, Y. ; van der Zanden, Koen
(1997)
Modelling of low-frequency dispersive effects in GaAs and InP HEMTs.
In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.
Full text available as:
Preview |
PDF
Download (1MB) | Preview |
Abstract
A previously proposed approach for modelling the dispersive effects in III-V FET devices is applied to InP and GaAs HEMTs in order to verify its validity also for heterostructure-based devices and to confirm its technology independence. Both surface states, bulk traps and thermal dispersive phenomena are simultaneously taken into account to allow for a better prediction of the deviations between dynamic (e.g., pulsed) and static drain current characteristics.
Abstract
Other metadata
Downloads
Downloads
Staff only:
