Abstract

We discuss the application of the Lumped-Eleinrrn., Finite-Difference TiitK-DumaJii (LE-FDTD) al­gorithm l.o the analysis of a planar active antenna. Through this approach, the full-wave si^na! propagation along the passive network is taken into account, at. the same time accounting for nun linear devices to be comprehensively considered. GaAs, as well as silicon, devices can he self-consist-enilv taken into account, and described either by a compact, analytical equations set, or by a distributed, numerical solution of the semiconductor transport equations. Both approaches arc illustrated in the paper: a OaAS Gunn diode is used to excite a slot, antenna, and is modeled at tbe distributed level; the same structure is then used as a frequency multiplier: in this case, non linearity is introduced by a Schot-tky diode, which is described hy a, compact equivalent circuit. In both cases, influence of the diode placement across the sloi is briefly discussed.