A novel approach to yield estimate and IMP performance optimization of microwave devices

Donati Guerrieri, S. ; Bonani, F. ; Pirola, M. ; Ghione, G. ; Filicori, F. (1997) A novel approach to yield estimate and IMP performance optimization of microwave devices. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.
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Abstract

This paper presents an efficient, physics-based approach to evaluate the large-signal (LS) parametric sensitivity of microwave devices operated in (quasi) periodic conditions. The approach is based on the combined use of a two-dimensional drift-diffusion physical model and of an intermediate circuit-oriented large-signal model. The LS parametric sensitivity is then exploited to optimize the doping profile of a GaAs MESFET so as to minimize the third-order intermodulation products (IMP) in a simple large-signal amplifier. An example of yield-oriented statistical analysis of device performances with respect to random variations of technological parameters is also presented.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Donati Guerrieri, S.
Bonani, F.
Pirola, M.
Ghione, G.
Filicori, F.
Subjects
DOI
Deposit date
23 Nov 2005
Last modified
17 Feb 2016 14:20
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