Lugli, Paolo ; Di Carlo, A. ; Ragazzi, Stefano ; Rossi, Fausto
(1997)
Quantum-transport in nanostructured compound semiconductor devices: a generalized monte carlo approach.
In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.
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Abstract
We present a theoretical investigation of quantum-transport phenomena in semiconductor nanostructures. In particular, a generalization to "open systems" of the well-known Semiconductor Bloch equations is proposed. Compared to the conventional Bloch theory, the presence of spatial boundary conditions manifest itself through self-energy corrections and additional source terms in the kinetic equations, which are solved by means of a generalized Monte Carlo simulation. The proposed numerical approach is applied to the study of quantum-transport phenomena in double-barrier resonant tunneling diodes and to the scattering-induced suppression of Bloch oscillations in serniconductor superlattices.
Abstract
We present a theoretical investigation of quantum-transport phenomena in semiconductor nanostructures. In particular, a generalization to "open systems" of the well-known Semiconductor Bloch equations is proposed. Compared to the conventional Bloch theory, the presence of spatial boundary conditions manifest itself through self-energy corrections and additional source terms in the kinetic equations, which are solved by means of a generalized Monte Carlo simulation. The proposed numerical approach is applied to the study of quantum-transport phenomena in double-barrier resonant tunneling diodes and to the scattering-induced suppression of Bloch oscillations in serniconductor superlattices.
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(Paper)
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DOI
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23 Nov 2005
Last modified
17 Feb 2016 14:21
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Document type
Conference or Workshop Item
(Paper)
Creators
Subjects
DOI
Deposit date
23 Nov 2005
Last modified
17 Feb 2016 14:21
URI
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