Chennafi, Noureddine ; Rumelhard, Christian ; Gonzalez, Carmen ; Thuret, Julien
(1997)
Simulation and measurement of optoelectronic performances
of InP/InGaAs heterojunction bipolar phototransistor.
In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.
Full text available as:
Preview |
PDF
Download (663kB) | Preview |
Abstract
Physical modeling of an InP/lnGaAs phototransistor using a two dimensional finite elements program was performed. A good agreements were found with measurements. A large-signal model of the phototransistor has been developed and implemented in MDS.
Abstract
Other metadata
Downloads
Downloads
Staff only:
