DC, RF and low frequency noise characterization of C and In/C doped GalnP/GaAs HBT's

Borgarino, M. ; Plana, R. ; Escotte, L. ; Delage, S. L. ; Blanck, H. ; Fantini, F. ; Graffeuil, J. (1997) DC, RF and low frequency noise characterization of C and In/C doped GalnP/GaAs HBT's. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.
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Abstract

This paper presents a comparative study, based on DC, RF and low frequency noise (LFN) measurements, between Carbon-doped, and Indium/Carbon doped GalnP/GaAs HBT's featuring different emitter widths. Both technologies exhibit an evident emitter size ef­fect, while C-doped devices have larger DC and RF gains and a lower input voltage noise level. The bet­ter performance has been justified in terms of a higher quality of the extrinsic base surface. This explanation was supported by the LFN measurements carried out on self-aligned devices, which revealed an electron dif­fusion current from the emitter toward the base, proba­bly due to the pinning of the Fermi level at the surface. The HBT's have been compared also in terms of relia­bility by means of electrical stress performed at room temperature. The effect, of the stress Was a DC cur­rent gain increase associated with a reduction of the base current and of the input voltage noise lorentzian component. The In/C doped devices exhibited the largest variations, and were more sensitive to the cur­rent stress.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Borgarino, M.
Plana, R.
Escotte, L.
Delage, S. L.
Blanck, H.
Fantini, F.
Graffeuil, J.
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DOI
Deposit date
23 Nov 2005
Last modified
17 Feb 2016 14:21
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