Abstract

This paper presents a new technology for the realization of multifunction self-aligned-gate GaAs MESFET's (SAGFET) through multiple implantation of silicon and carbon. The carbon different behaviour as shallow or deep acceptor as a function of annealing parameters and fluorine co-implantation is discussed and evidence is given that, being a carbon buried layer effective for carrier confinement in the active channnel, DC and RF performances can be considerably improved with respect to ordinary recess-gate MESFET's both for power and low-noise devices.