Effects of implanted carbon-buried p-layer on the performance of multifunction self-aligned-gate (MSAG) GaAs MESFET's

Fumi, F. ; Peroni, M. ; Lanzieri, C. ; Donati Guerrieri, S. ; Pirola, M. ; Bonani, F. ; Naldi, C. U. (1997) Effects of implanted carbon-buried p-layer on the performance of multifunction self-aligned-gate (MSAG) GaAs MESFET's. In: Gallium Arsenide Applications Symposium. GAAS 1997, 3-5 September 1997, Bologna, Italy.
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Abstract

This paper presents a new technology for the realization of multifunction self-aligned-gate GaAs MESFET's (SAGFET) through multiple implantation of silicon and carbon. The carbon different behaviour as shallow or deep acceptor as a function of annealing parameters and fluorine co-implantation is discussed and evidence is given that, being a carbon buried layer effective for carrier confinement in the active channnel, DC and RF performances can be considerably improved with respect to ordinary recess-gate MESFET's both for power and low-noise devices.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Fumi, F.
Peroni, M.
Lanzieri, C.
Donati Guerrieri, S.
Pirola, M.
Bonani, F.
Naldi, C. U.
Settori scientifico-disciplinari
DOI
Data di deposito
23 Nov 2005
Ultima modifica
17 Feb 2016 14:21
URI

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