Multistage broadband amplifiers based on GaNHEMT technology for 3G/4G base station applications with extremely high bandwidth

Wiegner, D. ; Merk, T. ; Seyfried, U. ; Templ, W. ; Merk, S. ; Quay, R. ; van Raay, F. ; Walcher, H. ; Massler, H. ; Seelmann-Eggebert, M. ; Reiner, R. ; Moritz, R. ; Kiefer, R. (2005) Multistage broadband amplifiers based on GaNHEMT technology for 3G/4G base station applications with extremely high bandwidth. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

GaN HFETs have been proposed for high power high linearity and high bandwidth applications andreached tremendous output power levels [1]. However, there are relatively few circuit examples especially for wideband power amplifiers fulfilling the requirements of future multiband/multistandard capable 3G/4G base stations. This work presents first promising results of realised GaN based wideband power amplifier demonstrators for the mentionedfield of application. Two different amplifier concepts for thefinal stage of a power amplifier module for medium range multiband base station applications in the L- and S-Bandhave been implemented as first amplifier demonstrators. Theamplifiers have been characterized by using single carrierW-CDMA signals and showed a promising high bandwidthfor output power levels up to > 10 W while meeting the3GPP ACLR specification in a wide frequency range.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Wiegner, D.
Merk, T.
Seyfried, U.
Templ, W.
Merk, S.
Quay, R.
van Raay, F.
Walcher, H.
Massler, H.
Seelmann-Eggebert, M.
Reiner, R.
Moritz, R.
Kiefer, R.
Subjects
DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:22
URI

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