A microstrip X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate

van Raay, F. ; Quay, R. ; Kiefer, R. ; Fehrenbach, W. ; Bronner, W. ; Kuri, M. ; Benkhelifa, F. ; Massler, H. ; Müller, S. ; Mikulla, M. ; Schlechtweg, M. ; Weimann, G. (2005) A microstrip X-band AlGaN/GaN power amplifier MMIC on s.i. SiC substrate. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

A two-stage high-power amplifier MMIC was realized with a chip size of 4.5 mm x3 mm operating between 8GHz and 10 GHz based on a fully integrated microstrip AlGaN/GaN HEMTtechnology on s.i. SiCsubstrate.TheMMIC device delivers a maximum pulsed out put power of 8.9 W (39.5 dBm) at 8.5 GHz at VDS = 31 V,10%dutycycle,and more than 6 dB gain compression level, and features a linear gain in excess of 20 dB.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
van Raay, F.
Quay, R.
Kiefer, R.
Fehrenbach, W.
Bronner, W.
Kuri, M.
Benkhelifa, F.
Massler, H.
Müller, S.
Mikulla, M.
Schlechtweg, M.
Weimann, G.
Subjects
DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:22
URI

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