Substrate effects in wideband SiGe HBT mixer circuits

Johansen, T.K. ; Krozer, V. ; Vidkjær, J. ; Djurhuus, T. (2005) Substrate effects in wideband SiGe HBT mixer circuits. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

In this paper the influence from substrate effects on the performance of wideband SiGe HBT mixer circuits is investigated. Equivalent circuit models including substrate networks are extracted from on-wafer test structures and compared with electromagnetic simulations. Electromagnetic simulations are also applied to predict short distance substrate couplinge effects. Simulation results using extracted equivalent circuit models and substrate coupling networks are compared with experimental results obtained on a wideband mixer circuit implemented in a 0.35µm, 60 GHz fT SiGe HBT BiCMOS process.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Johansen, T.K.
Krozer, V.
Vidkjær, J.
Djurhuus, T.
Subjects
DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:22
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