A W-band MMIC amplifier using 70-nm gate length InP HEMT technology

Malmkvist, Mikael ; Mellberg, Anders ; Grahn, Jan (2005) A W-band MMIC amplifier using 70-nm gate length InP HEMT technology. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

InP HEMT transistors using 70-nm gate length have been fabricated and modeled. Two different epitaxial structures have been tested based on either single- or composite InGaAs channel. The composite-channel HEMT exhibited significantly higher maximum transconductance, 1370 mS/mm, compared to 860 mS/mm for the single-channel HEMT whereas ft (fmax) was approximately the same, 190 (260) GHz, and 200 (320) GHz, respectively. A W-band microstrip MMIC amplifier using 70-nm gate length InP HEMT technology has been designed and fabricated for the single-channel structure. The one-stage amplifier exhibited a gain of 8 dB at 94 GHz.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Malmkvist, Mikael
Mellberg, Anders
Grahn, Jan
Subjects
DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:23
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