Maas, A.P.M. ; Hoogland, J.A.
(2005)
60 GHz GaAs MMIC mixers with integrated LO buffer.
In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract
Using the 0.15 µm GaAs mHEMT process from WIN semiconductors, two 60 GHz down-conversion mixers have been designed, processed and measured. Both designs include a LO buffer amplifier to allow for a reduced external LO power level. With an LO power of +10 dBm, the measured RF input match is better than -15 dB at 60 GHz and the conversion loss is below 8 dB at 2 GHz intermediate frequency.
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