Thermal characterisation and analysis of two tone intermodulation distortion in InGaP/GaAs DHBT

Khan, A. ; Dharmasiri, C. N. ; Miura, T. ; Rezazadeh, A. A. (2005) Thermal characterisation and analysis of two tone intermodulation distortion in InGaP/GaAs DHBT. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

The effect of temperature (-25 to1000C) on two-tone Intermodulation Distortion (IMD) characteristics of InGaP/GaAs microwave DHBTs is studied. This is carried out through measurement with the results being compared to a simple analytical technique. The results indicated that varying the temperature has a significantimpact on the IMD characteristics. The variations of small signal parameters with temperature, extracted from S-parameter measurements,are then used to carefully analysethe IMD characteristics and identify the physical origin of the change in the non-linearity. In addition, theeffectsofvarying input power on the non-linearities has been studied.This analysis has been reported for the first time and is important in understanding the non-linear characteristics of the microwave device.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Khan, A.
Dharmasiri, C. N.
Miura, T.
Rezazadeh, A. A.
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:23
URI

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