Abstract

A low power dissipation, fast response and reasonable noise performance GaAs MESFETs preamplifier, able to work at low temperatures (89°K) and under high radiation dosis (>10Mrad), is presented. Attention is given to noise modeling for an application to particle detectors front-end electronics. Noise optimization can be achieved through careful layout design of the preamplifier's input transistor. This preamplifier is intended to be followed by a GaAs LED-Driver both working under the same physical conditions. A GaAs preamplifier and LED driver circuit has been designed and test results are presented and discussed in this paper.