A simple technique for measuring the thermal impedance and the thermal resistance of HBTs.

Lonac, J.A. ; Santarelli, A. ; Melczarsky, I. ; Filicori, F. (2005) A simple technique for measuring the thermal impedance and the thermal resistance of HBTs. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

This paper presents a new and simple method for characterizing the thermal behavior ofHeterojunction Bipolar Transistors, based on DC, AC andlow frequency small signal measures of H (hybrid)parameters. Static characterization of the thermal behavioris achieved through the calculation of a thermal resistance, while a thermal impedance is used to describe thermaldynamic behavior. Validation results for the method obtained from both simulations and experimental data areincluded in the paper for a 10x2x40 µm InGaP/GaAs power HBT.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Lonac, J.A.
Santarelli, A.
Melczarsky, I.
Filicori, F.
Subjects
DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:25
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