Materials for GaInP/GaAs HBT's performed within the GAMMA project

Bland, Stephen W. (1999) Materials for GaInP/GaAs HBT's performed within the GAMMA project. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
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Abstract

This paper describes the development of a European source of GaInP HBT epitaxial wafers within the ESPRIT GAMMA (GaAs Materials for Microwave Applications) project. The GAMMA project started in May 1996 and was completed at the end of May 1998. At the start of the project there was no credible source for GaInP HBT epitaxial wafers within Europe, however by the end of the project Epitaxial Products International Ltd (EPI) had established a world-class capability for the supply of 3" and 4" diameter epitaxial wafers.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
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AutoreAffiliazioneORCID
Bland, Stephen W.
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:26
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