Abstract

This paper describes the development of a European source of GaInP HBT epitaxial wafers within the ESPRIT GAMMA (GaAs Materials for Microwave Applications) project. The GAMMA project started in May 1996 and was completed at the end of May 1998. At the start of the project there was no credible source for GaInP HBT epitaxial wafers within Europe, however by the end of the project Epitaxial Products International Ltd (EPI) had established a world-class capability for the supply of 3" and 4" diameter epitaxial wafers.