Abstract

Realisation and characterisation of Al0.22Ga0.78As/In0.22Ga0.78As/GaAs multifinger linear power pHEMT's, using a citric acid selective wet etching for the gate recessing, are reported. A very high uniformity of the drain current and the threshold voltage values have been obtained. This high linearity is confirmed by a quasi flat transconductance over a wide gate source voltage. Power and intermodulation distortion at 16 GHz are also reported. A maximum output power of 1.1 W/mm and an IP3 value of 25 dBm have been measured.