High linearity of double channel GaAs pHEMT using a very high selective wet etching

Hue, X. ; Boudart, B. ; Bonte, B. ; Crosnier, Y. (1999) High linearity of double channel GaAs pHEMT using a very high selective wet etching. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
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Abstract

Realisation and characterisation of Al0.22Ga0.78As/In0.22Ga0.78As/GaAs multifinger linear power pHEMT's, using a citric acid selective wet etching for the gate recessing, are reported. A very high uniformity of the drain current and the threshold voltage values have been obtained. This high linearity is confirmed by a quasi flat transconductance over a wide gate source voltage. Power and intermodulation distortion at 16 GHz are also reported. A maximum output power of 1.1 W/mm and an IP3 value of 25 dBm have been measured.

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Hue, X.
Boudart, B.
Bonte, B.
Crosnier, Y.
Settori scientifico-disciplinari
DOI
Data di deposito
16 Gen 2006
Ultima modifica
17 Feb 2016 14:26
URI

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