Experimental and theoretical studies of near-breakdown phenomena in GaAs-based heterostructure FETs

Sleiman, A. ; Rossi, L. ; Di Carlo, A. ; Tocca, L. ; Bonfiglio, A. ; Brunori, M. ; Lugli, P. ; Zandler, G ; Meneghesso, G. ; Zanoni, E. ; Canali, C. ; Cetronio, A. ; Lanzieri, M. ; Peroni, M. (1999) Experimental and theoretical studies of near-breakdown phenomena in GaAs-based heterostructure FETs. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

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Abstract

We have investigated electrical and optical phenomena related to impact ionization in the near breakdown regime of heterostructure FETs. The experimental analysis is based on electroluminescence spectroscopy correlated to minority carrier gate current measurements. Such experiments are interpreted by means of Monte Carlo simulations.

Abstract

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Documento relativo ad un convegno o altro evento (Atto)

Autori

Autore	Affiliazione	ORCID
Sleiman, A.
Rossi, L.
Di Carlo, A.
Tocca, L.
Bonfiglio, A.
Brunori, M.
Lugli, P.
Zandler, G
Meneghesso, G.
Zanoni, E.
Canali, C.
Cetronio, A.
Lanzieri, M.
Peroni, M.