Jiang, Ningyue ; Ma, Zhenqiang
(2005)
Power gain analysis of SiGe HBTs with constant ge strain.
In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
Full text available as:
Preview |
PDF
Download (176kB) | Preview |
Abstract
The power gain of SiGe HBTs with constant total Ge content (strain) but different doping profiles is studied under common-emitter (CE) and common-base (CB) configurations. It is found that CE and CB configurations show different power gain sensitivity on doping concentration and bias condition. The sensitivity of fmax on Ge profile and doping profile is also investigated.
Abstract
Other metadata
Downloads
Downloads
Staff only:
