Influence of envelope impedance termination on RF behaviour ofGaN HEMT power devices

Bunz, B. ; Ahmed, A. ; Kompa, G. (2005) Influence of envelope impedance termination on RF behaviour ofGaN HEMT power devices. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.

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Abstract

The influence of envelope source and loadterminations on theRF performance of high power GaN amplifiers is investigated.An error-corrected two-tonemeasurement system has been developed enabling load- and source pull measurements in the envelope frequencybandwidth. Measured results on a 0.5µm-HEMT with a gatewidth of 8x125 µmshow a variation of 1 dB output powerand 8 % PAE.

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