Jacobs, B. ; Karouta, F. ; Kwaspen, J.J.M. ; Hageman, P.R. ; Kaufmann, L.M.F. ; Larsen, P.K.
(1999)
The processing and scalability of AlGaN/GaN HEMTs.
In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
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Abstract
This paper presents a discussion on the processing of AlGaN/GaN HEMTs with different gate widths but all with an optically defined 1 um gate length. Scalability of transistor parameters will be discussed and a small-signal equivalent circuit is extracted which shows the influence of the processing of the Schottky and ohmic contacts.
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