Abstract

III-V Nitride Based MISFETs have been studied using AIN/GaN heterostructures grown by MOCVD at the University of Michigan. MIS structures fabricated on such materials showed very low interface state density Dit values of -lx1011cm-2eV-1. The maximum drain current of AIN/GaN MISFETs made on these materials was greater than 700mA/mm, while drain-source breakdown was 30 V and drain-gate breakdown was 40V. Devices with a gate length of 2(j.m exhibited a peak transconductance of 136mS/mm at VGS=1V, which exceeds previously reported results.