High purity AlGaAs grown by molecular beam epitaxy

Zhuravlev, K.S. ; Toropov, A.I. ; Shamirzaev, T.S. ; Bakarov, A.K. ; Rakov, Yu.N. ; Myakishev, Yu. B. (1999) High purity AlGaAs grown by molecular beam epitaxy. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.

Salva citazione

Citato da

Full text disponibile come:

Anteprima

Documento PDF
Download (1MB) | Anteprima

Abstract

We report the growth and photoluminescence study of very high quality AlxGal-xAs layers grown by molecular beam epitaxy over the 0<x<0.38 composition range. Heterostructure doped-channel FET's (DCFET's) manufactured using pseudomorphic AlGaAs/InGaAs/GaAs heterostruc-tures containing such a layer have produced an output power of about 1 W/mm with 7.8 dB small signal gain and 60 % power-added efficiency at 18 GHz.

Abstract

Tipologia del documento

Documento relativo ad un convegno o altro evento (Atto)

Autori