A new 2-D GaAs MESFETs model based on a very accurate velocity - field expression

Bobbo, B. M. ; Giorgio, A. ; Passaro, V. M. N. ; Perri, A. G. ; Pesare, M. (1999) A new 2-D GaAs MESFETs model based on a very accurate velocity - field expression. In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
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Abstract

A new physical model for GaAs MESFET drain current and gate capacitance based on the Chang-Fetterman velocity-electric field model, is presented. Accurate analytical expressions for the 2-D channel potential in the saturation region are adequately employed and mathematically manipulated in order to develop a 2-D C-V physical MESFET model without the main approximations used up to now in the previous physical models.

Abstract
Document type
Conference or Workshop Item (Paper)
Creators
CreatorsAffiliationORCID
Bobbo, B. M.
Giorgio, A.
Passaro, V. M. N.
Perri, A. G.
Pesare, M.
Subjects
DOI
Deposit date
12 Dec 2005
Last modified
17 Feb 2016 14:28
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