Abstract

This paper presents a new original full wave hybrid approach based on a wave concept formulation to analyze inhomogeneous layers stack with arbitrary doping profiles. To demonstrate capabilities of this approach simulation results are presented and successfully compared to published results and available software in the case of homogeneous multilayer BiCMOS typical structure with and without buried diffusions layers (BDL) for multi-levelmetallizations. To reduce epitaxial/substrate coupling noise, metallically grilled BDL with varying doping profiles are investigated and exhibit an isolation improvement of about 20 dB.