Abstract

A dual-wavelength laser diode of 1.3um and 1.55um operating wavelength is under analysis. The structure of this laser diode involves an asymmetric dual quantum-well of AlGaSb/GaSb . The longer-wavelength quantum-well is doped with a 50A Si at the barrier near the well. This will enable a localized intermixing during an anneal under a SiNx cap, while the shorter-wavelength quantum-well is not affected. The area where GaSb is exposed has no intermixing in both the quantum-wells. It is possible to construct a dual wavelength quantum-well laser where the surface is pattered to have a section covered with SiNx and the other has GaSb exposed. The GaSb -exposed section undertakes surface lasing at 1.55u.m, while the SiNx capped section removes the longer wavelength quantum well by intermixing and lasing at 1.3um.