Kasper, Erich ; Eberhardt, Jochen
(1999)
Physics of future ultra high speed transistors - part 1: HBT.
In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
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Abstract
An overview about current status of SiGe-HBT production is given. Advanced SiGe-HBTs are predicted to reach in near future fT=200 GHz. Design examples are given.
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