Higgins, J. Aiden
(1999)
III-V technologies: a growth industry for the 21st century.
In: Gallium Arsenide Applications Symposium. GAAS 1999, 4-5 October 1999, Bologna, Italy.
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Abstract
The role that III-V compound semiconductors will play in the early years of the 21st century will be subject to frequent change. This is not only because of the expanding capabilities of the III-Vs but also because of the advances in Silicon technologies, particularly Silicon-Germanium HBTs. It is possible to point out more than a few applications that will remain growth areas for the III-Vs. This paper will not dwell on those applications, which are related to LEDS and Lasers or on Millimeter Wave amplifiers, but will instead focus on those applications where the future is more subject to revision. These are the high speed applications of HBTs. The competition will be a boost to development of III-V HBTs because innovations and improvements will be implemented as a result.
Abstract
The role that III-V compound semiconductors will play in the early years of the 21st century will be subject to frequent change. This is not only because of the expanding capabilities of the III-Vs but also because of the advances in Silicon technologies, particularly Silicon-Germanium HBTs. It is possible to point out more than a few applications that will remain growth areas for the III-Vs. This paper will not dwell on those applications, which are related to LEDS and Lasers or on Millimeter Wave amplifiers, but will instead focus on those applications where the future is more subject to revision. These are the high speed applications of HBTs. The competition will be a boost to development of III-V HBTs because innovations and improvements will be implemented as a result.
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(Paper)
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DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:29
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Document type
Conference or Workshop Item
(Paper)
Creators
Subjects
DOI
Deposit date
15 Feb 2006
Last modified
17 Feb 2016 14:29
URI
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