A wideband balanced AlGaN/GaN HEMT MMIC low noise amplifier for transceiver front-ends

Seo, Sanghyun ; Pavlidis, Dimitris ; Moon, Jeong-Sun (2005) A wideband balanced AlGaN/GaN HEMT MMIC low noise amplifier for transceiver front-ends. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
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Abstract

A 3-16 GHz wideband AlGaN/GaN high electron mobility transistor (HEMT) low noise amplifier (LNA), using balanced configuration with a coplanar waveguide (CPW) Lange coupler, is designed and fabricated. The LNA shows a minimum noise figure of 4 dB with associated gain of 20 dB and gain flatness of +/

Abstract
Tipologia del documento
Documento relativo ad un convegno o altro evento (Atto)
Autori
AutoreAffiliazioneORCID
Seo, Sanghyun
Pavlidis, Dimitris
Moon, Jeong-Sun
Settori scientifico-disciplinari
DOI
Data di deposito
15 Feb 2006
Ultima modifica
17 Feb 2016 14:30
URI

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