Seo, Sanghyun ; Pavlidis, Dimitris ; Moon, Jeong-Sun
(2005)
A wideband balanced AlGaN/GaN HEMT MMIC low noise amplifier for transceiver front-ends.
In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
Full text available as:
Preview |
PDF
Download (408kB) | Preview |
Abstract
A 3-16 GHz wideband AlGaN/GaN high electron mobility transistor (HEMT) low noise amplifier (LNA), using balanced configuration with a coplanar waveguide (CPW) Lange coupler, is designed and fabricated. The LNA shows a minimum noise figure of 4 dB with associated gain of 20 dB and gain flatness of +/
Abstract
Other metadata
Downloads
Downloads
Staff only:
